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Источники МЛЭ (MBE) фирмы ADDON


Выбор источника по элементу или компоненту

The following elements and compounds list permits to select the recommanded source for a given application.

Just click on the selected material to reach the proposed source specification and available models according to your MBE system.


Выбор источника по таблице элементов

Element or
compound		 Temperature (°C) at vapor pressor in Torr Element
Melting Temp.		 Recommanded
Cell		 Element or
compound		 Temperature (°C) at vapor pressor in Torr Element
Melting Temp.		 Recommanded
Cell
10-8 10-6 10-4 10-8 10-6 10-4
Ag 574 685 832 962 Standard or
High Temp.		 La 990 1212 1388 920 High Temp.
Al 685 812 972 660 New Al Li 235 306 404 180 Low Temp.
Amoniac ... ... ... ... Gas Injector Lu 870 1228 1376 1663 High Temp.
As 104 150 972 817 Valved Cracker
or Low Temp.		 Metal Organic Compounds ... ... ... ... Low Temp.
Gas Cracker
Au 807 947 1132 1064 Standard or
High Temp.		 Mg 185 246 327 650 Low Temp.
Arsine ... ... ... ... High Temp.
Gas Cracker		 Mn 505 611 747 1246 Low Temp.
B 1282 1467 1707 2075 Dopant Cell or
High Temp.		 N ... ... ... ... Rf Plasma or
Valved RF Plasma
Ba 272 354 462 727 Low Temp. Na 74 123 193 98 Low Temp.
BaF2 729 840 984 ... Double Zone
or High Temp.		 Ni 927 1072 1262 1455 High Temp.
Be 707 832 997 1287 Dopant Cell O ... ... ... ... Rf Plasma or
Valved RF Plasma
Bi 329 409 517 271 Low Temp. Pred 54 88 129 White form
52		 Valved Cracker
C 1657 1867 2136 3550 Carbon Doping PbSe 346 420 514 1065 Low Temp.
Ca 282 357 459 842 Low Temp. PbTe 339 413 508 917 Low Temp.
CaF2 817 938 1094 1360 Double Zone
or High Temp.		 Pd 842 992 1192 1555 High Temp.
Cd 74 119 177 321 Low Temp. Posphine ... ... ... ... High Temp.
Gas Cracker
CdS 367 448 555 1750 Low Temp. Pt 1292 1492 1747 1768 High Temp.
CdSe 359 438 543 1264 Low Temp. S -10 17 55 115 Valved Cracker
CdTe 290 362 455 1098 Low Temp. Sb 279 345 425 631 Valved Cracker
or Low Temp.
Co 922 1067 1257 1495 High Temp. Sc 772 917 1107 1541 Double Zone
Cr 837 977 1157 1907 High Temp. Se 63 107 164 221 Valved Cracker
or Low Temp.
Cu 722 852 1027 1085 Double Zone
or High Temp.		 Si 992 1147 1337 1414 Si Source
Dy 625 747 897 1411 Double Zone
or High Temp.		 Sn 682 807 997 232 Dopant Cell
Er 649 777 897 1529 Double Zone
or High Temp.		 SnTe 314 384 473 780 Dopant Cell
Eu 283 361 466 822 Low Temp. Sr 241 309 404 777 Low Temp.
Fe 858 998 1180 1538 High Temp. Te 155 209 280 450 Valved Cracker
or Low Temp.
Ga 619 742 907 30 Double Zone
or Standard		 V 1162 1332 1547 1910 High Temp.
Ge 812 947 1137 938 Hot /Cold Zone or Cold Lip Y 957 1117 1332 1526 High Temp.
H ... ... ... ... RF Plasma or
Hydrogen Atomic or
Valved RF Plasma		 Yb 247 317 417 824 Low Temp.
Hg 72 -44 7 -38,63 Special Hg
Valved Cell		 Zn 123 177 247 420 Low Temp.
In 488 597 742 157 Double Zone
or Standard		 ZnS 487 582 704 1830 Low Temp.
K 21 65 123 64 Low Temp. ZnTe 361 439 540 1238 Low Temp.


Выбор источника в зависимости от давления насыщеного пара

GUIDE FOR SOURCE SELECTION
How to select an MBE source:

The selection of a cell depends first on the type of materials to be evaporated and the application.
The following is a classification of the different ADDON sources by Vapor Pressure Level and elements for most of the common MBE materials
High Vapor Pressure Materials
(source temperature: < 750° C)		 Recommanded source type
As, P, S, Sb, Te & Se Valved Cracker Cells
Other Materials
Very High Vapor Pressure Materials
(source temperature:50° C - 400° C)
Polymers, Organics Very Low Temperature cell
Hg, As, Cd, Se, Zn Very Low Temperature cell or Mercury cell
Other Materials Very Low Temperature cell
Medium Vapor Pressure Materials
(source temperature: 700°C – 1400°C)
Al "Hot Zone/Cold Zone" cell or "Cold Lip"
Ga, In "Double Zone" or "Hot Lip" cell
Other Materials "Hot Lip" if condensation / convection are a problem
Minicell
Dopants
(for Low & Medium Vapor Pressure Materials)
Be, Dy, Er, Ge, Si, Sn, Y, PbTe, SnTe Dopant Effusion cell
C C Sublimation Doping source
N, O Plasma Source
P, As (in Si) Si Doping Sublimation source
Low Vapor Pressure Solid Materials
(source temperature > 1350°C)
Transition Metals, Boron High Temperature cell
Rare Earths High Temperature cell
Silicon Si Deposition Sublimation source
Gases for Nitride growths, CBE or MOMBE or GSMBE, substrates preparation or doping
Atomic N, O, H & radicals Thermal Cracking or RF Plasma Source or Valved RF
Hydrides High Temperature thermal cracker or injector
Organo-metallic compounds Low Temperature thermal cracker or injector
Ammoniac Low Temperature thermal cracker or injector


If you wish to evaporate a material which is not specified above please refer to the Guide for Source Selection by Element or Compound to find the appropriate source.
If you have any further questions please do not hesitate to contact us directly.

When the proper type of cell is selected the following criteria are often to be considered:

1 Crucible type and dimensions
Please refer to page Crucible Type to select the proper crucible according to the material to be evaporated
( ie Group III determine the uniformity of the deposition ) , the substrate dimensions and the MBE geometry.

2 Port dimensions, system geometry
If the MBE system is a well known commercial one it is generally sufficient to know the port size and its location to select the proper source.
In case of doubt Addon can supply you with additional information about the compatibility of your choice with your system.

If your system is a custom designed one it is useful to consider the following. Do not hesitate to contact us we will be happy to help you make the best selection.
• Flange size and type
• Tube internal dimension ( Tube ID)
• Available length between the flange seal ( knife) and the shutter (Referred to as Cell Length in this brochure)
• Source to substrate incidence angle and distance
• Integrated shutter and/or an integrated cooling needs
• Availability of existing control, power supplies and cables. If a new unit is needed see Electronics below.

ADDON can install most of its sources on non-standard or uncommon flanges upon request at a reasonable charge
(a customer drawing could be required).

3 Electronics:
ADDON cells are designed to allow the user to use his existing controls and power supplies whenever possible . If a new power system is necessary, the ADDON models are recommended. Using the most up to date microelectronic components, they are simple to use, effective and economic. Seven metre long cables comes with the power unit. Addon integrates only high quality PID controllers and DC well regulated and stable power units ( SCR’s types are not allowed in Europe)
Electrical connectors used on most of our cells are the Addon Uniplug. It integrates power and compensated TC connections. These plugs are fully bakeable and mate directly to the standard power unit cable connectors used by major MBE manufacturers. ( Riber, Varian/Intevac, VG Semicon and EPI). No dismounting of original cable connectors is necessary.