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Model Number |
См. также "ВЫСОКОЧАСТОТНАЯ ПЛАЗМЕННАЯ ЯЧЕЙКА"
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A revolutionary atom or radical source provides rapid
and reproducible reactive Nitrogen species
flow modulation and unsurpassed Nitrogen
concentration uniformity over large wafers
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- Allows a mechanical control over the useful range of N concentration in GaAsN while the source parameters remain constant
- Converts the directional flux of reactive Nitrogen into a nearly ideal gas at the substrate level and achieves an unsurpassed uniform Nitrogen incorporation over very large wafer or multiwafer platens
- Allows starting or stopping of the Nitrogen incorporation with no delay
- Permits use of a well degassed source at any time during the growth period
- Models adapted for Oxygen, Ammoniac, Hydrogen …
- Easy to install on any DN63CF (4.5”) or larger flange
- No time-consuming end plate exchanges needed
- Powered by standard customer and competitor electronics
- Totally eliminates ions, minimizes layer defects
- Models available for R&D and Production MBE systems
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| Compared to standard RF Plasma sources, this new source gives an easiness of control similar to the Valved Cracker cell compared to standard effusion cell. |
This source was designed to obtain the same flexibility to adjust the flux of Nitrogen reactive species than it can be achieved with a Valved Cracker cell compared to a Standard effusion cell.
While the vale is closed, the source can remain in same working conditions, ready to use without waiting for plasma start and stabilization as necessary with usual RF source.
The unique, patented design of the Addon Valved RF transform the flux emitted by a standard RF source to something like a gas of reactive species, giving an unsurpassed flux uniformity over large wafers.
When high uniformity is required over large platens (for production systems), the Valved RF cell gives advantages on working pressure in the chamber compared to other solutions using large diameter RF cells. The molecular Nitrogen flux is of a few sccm with Addon Valved RF, versus several tens of sccm with a standard RF source with large end plate diaphragm. This results in a lower operating pressure in the system, allowing better process conditions.
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| N concentration across a 4" substrate (GaAsN1,1%) |
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Fig 2 : Mechanical control over
the useful range of N concentration in GaAsN
while the source parameters remain constant
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Fig 1 : Unsurpassed uniform Nitrogen incorporation over very large wafer or multiwafer platens |
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| Model Number |
Description |
| VPRF-N-600* |
Valved RF Plasma source for nitrides growth
DN63CF ( 4 1/2''- 114 mm) mounting flange
283,5 mm In-vacuum length
Plasma observation viewport and N2 gas inlet on miniflanges
Integrated water cooling (approx. 0,6 l/min)
Manual RF tuning unit with cooling fan and cable ( 120 or 240 volts)
Manual and/or motorized valve adjustment of reactive species flux
Water flow meter and water switch for generator interlock |
| PS600-PRF |
Power supply Controller/Generator
600 watts - 13,56 MHz- 7 m RF cable |
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For ammonia, oxygen or hydrogen use please consult us
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Automated Valve Positioner available; click here
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Top of the page |
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Better than 1% uniformity achieved on a production MBE system over 4" wafer with Valved Plasma Source. |
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